4v drive pch mosfet RP1E050RP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package. 3) 4v drive. ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 RP1E050RP ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 30 v gate-source voltage v gss ? 20 v continuous i d ? 5a pulsed i dp ? 20 a continuous i s ? 1.6 a pulsed i sp ? 20 a power dissipation p d 2.0 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 62.5 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter * (1) source (2) source (3) gate (4) drain (5) drain (6) drain ?1 esd protection diode ?2 body diode *2 *1 *1 mpt6 (6) (5) (4) (1) (2) (3) ?2 ?1 (5) (4) (2) ( 1) ( 3) (6) 1/5 2010.04 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E050RP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -3650 i d = ? 5a, v gs = ? 10v -5272 i d = ? 2.5a, v gs = ? 4.5v -5880 i d = ? 2.5a, v gs = ? 4.0v forward transistor admittance l y fs l4 - - si d = ? 5a, v ds = ? 10v input capacitance c iss - 850 - pf v ds = ? 10v output capacitance c oss - 120 - pf v gs =0v reverse transfer capacitance c rss - 120 - pf f=1mhz turn-on delay time t d(on) -9-nsi d = ? 2.5a, v dd ? 15v rise time t r - 25 - ns v gs = ? 10v turn-off delay time t d(off) - 55 - ns r l =6.0 ? fall time t f - 30 - ns r g =10 ? total gate charge q g - 9.2 - nc i d = ? 5a, v dd ? 15v gate-source charge q gs - 2.4 - nc v gs = ? 5v r l =3.0 ? gate-drain charge q gd - 3.6 - nc r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/5 2010.04- rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E050RP ? electrical characteristics curves 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v gs = -3.0v ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -3.5v v gs = -2.5v 0.001 0.01 0.1 1 10 0123 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = -10v ta=25c pulsed 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 2 4 6 8 10 0246810 ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -3.5v v gs = -3.0v v gs = -2.5v 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain-current : -i d [a] drain-current : -i d [a] static drain-source on-state resistance : r ds(on) [m ? ] drain-current : -i d [a] forward transfer admittance : |yfs| [s] drain-current : -i d [a] rever s e drain c urrent : -is [ a ] source-drain voltage : -v sd [v] static drain - source on - state resistance : r ds ( on ) [m ? ] static drain - source on - state resistance : r ds ( on ) [m ? ] 3/5 2010.04 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E050RP 0 50 100 150 200 0 5 10 15 ta=25c pulsed i d = -5.0a i d = -2.5a 0 2 4 6 8 10 0 5 10 15 20 ta=25c v dd = -15v i d = -5.0a r g =10? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms ta = 25c single pulse mounted on ceramic board dc operation operation in this area is limited by r ds(on) (v gs =-10v) p w =100us p w =1ms 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth(ch-a)(t) = r(t)rth(ch-a) rth(ch-a) = 62.5 c/w 1 10 100 1000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25c v dd = -15v v gs = -10v r g =10? pulsed t r fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating area fig.15 normalized transient thermal resistance vs. pulse width static drain - source on - state resistance : r ds ( on ) [m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf] drain-source voltage : -v ds [v] drain current : -i d (a) pulse width : pw(s) normarized transient thermal resistance : r (t) 4/5 2010.04 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RP1E050RP ? measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 5/5 2010.04 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
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